1-31 sales offices: visit our web site at http://www.temex.net tuning varactor selection guide selection guide page surf a ce mount silicon abrupt tuning v ara ct or 1 -32 high q silicon abrupt junction tuning v ara ct or - vbr = 30 v 1 -34 - vbr = 45 v 1 -35 silicon hyperabrupt junction tuning v ara ct or 1 -36 micr o w a ve silicon hyperabrupt junction tuning v ara ct or 1 -39 a tuning varactor is a p-n diode that acts as a voltage controlled capacitor. these devices perform the same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast band receivers. tuning varactor
1-32 sales offices: visit our web site at http://www.temex.net description this series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. this technology is used to produce abrupt tuning varactor in sot23 package. this family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. applications the dh71000 series abrupt tuning varactor are offered in a large selection of capacitance range. they provide the highest q factor (low reverse series resistance) available for a 30 volts silicon device. typical applications include low noise narrow and moderate frequency bandwidth applications (vco mainly) from hf to microwave frequencies (up to 3 ghz). other applications are voltage tuned ?ters, phase shifters, delay line, etc. note : variation of the junction capacitance versus reverse voltage follows this equation: c j (v r ) c j (0 v) 1 + v r v r : reverse voltage : built-in potential .7v for si : .5 for abrupt tuning varactor tuning varactor plastic package surface mount silicon abrupt tuning varactor [ ] sot23 surface mount silicon abrupt tuning varactor =
1-33 sales offices: visit our web site at http://www.temex.net tuning varactor plastic package surface mount silicon abrupt tuning varactor dh71010 30 1.0 20% 4.0 4300 dh71016 30 1.6 20% 4.5 4100 dh71020 30 2.0 20% 4.6 3900 dh71030 30 3.0 20% 4.7 3400 dh71045 30 4.5 20% 4.8 2200 dh71067 30 6.7 10% 4.9 2600 dh71100 30 10 10% 5.0 2200 (1) other tolerance on request temperature ranges: operating junction (t j ): -55 c to +125 c storage: -65 c to +150 c min. (1) vpf electrical breakdown junction tuning figure parameters voltage capacitance ratio of merit v br c j q test conditions i r = 10 ? f = 1 mhz c j0v /c j30v v r = 4 v v r = 4 v f = 50 mhz electrical characteristics at ta = +25 c reverse breakdown voltage, vb = @10 ?: 30 v min. type typ. typ. packages sod323 sot23 sot23 sot23 sot143 packages dh71010 dh71010-60 dh71010-51 dh71010-53 dh71010-54 dh71010-70 dh71016 dh71016-60 dh71016-51 dh71016-53 dh71016-54 dh71016-70 dh71020 dh71020-60 dh71020-51 dh71020-53 dh71020-54 dh71020-70 dh71030 dh71030-60 dh71030-51 dh71030-53 dh71030-54 dh71030-70 dh71045 dh71045-60 dh71045-51 dh71045-53 dh71045-54 dh71045-70 dh71067 dh71067-60 dh71067-51 dh71067-53 dh71067-54 dh71067-70 dh71100 dh71100-60 dh71100-51 dh71100-53 dh71100-54 dh71100-70 (1) other con?uration available on request. how to order? dh71010 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143
1-34 sales offices: visit our web site at http://www.temex.net tuning varactor high q silicon abrupt junction tuning varactor typ. 20 % (2) min. c b = 0.18 pf (3) min. c b = 0.12 pf (3) min. eh71004 c2a 50 0.4 4500 dh71004 f27d 3.0 m208 3.3 eh71006 c2a 60 0.6 4500 dh71006 f27d 3.4 m208 3.7 eh71008 c2a 70 0.8 4400 dh71008 f27d 3.7 m208 4.0 eh71010 c2a 80 1.0 4300 dh71010 f27d 4.0 m208 4.3 eh71012 c2a 90 1.2 4200 dh71012 f27d 4.3 m208 4.5 eh71016 c2a 100 1.6 4100 dh71016 f27d 4.5 m208 4.6 eh71020 c2a 110 2.0 3900 dh71020 f27d 4.6 m208 4.7 eh71025 c2a 120 2.5 3600 dh71025 f27d 4.6 m208 4.8 eh71030 c2a 140 3.0 3400 dh71030 f27d 4.7 m208 4.8 eh71037 c2a 150 3.7 3200 dh71037 f27d 4.7 m208 4.8 eh71045 c2a 170 4.5 3000 dh71045 f27d 4.8 m208 4.9 eh71054 c2a 180 5.4 2800 dh71054 f27d 4.8 m208 4.9 10 % (2) c b = 0.18 pf (3) c b = 0.2 pf (3) eh71067 c2a 200 6.7 2600 dh71067 f27d 4.9 bh142 4.9 eh71080 c2b 220 8.0 2400 dh71080 f27d 5.0 bh142 5.0 eh71100 c2b 250 10.0 2200 dh71100 f27d 5.0 bh142 5.0 eh71120 c2b 270 12.0 2000 dh71120 f27d 5.1 bh142 5.1 eh71150 c2b 300 15.0 1800 dh71150 f27d 5.1 bh142 5.1 eh71180 c2b 330 18.0 1700 dh71180 f27d 5.2 bh142 5.2 eh71200 c2b 350 20.0 1500 dh71200 f27d 5.2 bh142 5.2 eh71220 c2b 370 22.0 1400 dh71220 f27d 5.2 bh142 5.2 eh71270 c2b 410 27.0 1300 dh71270 f27d 5.2 bh142 5.2 eh71330 c2c 450 33.0 1200 dh71330 f27d 5.2 bh142 5.2 eh71390 c2c 500 39.0 950 dh71390 f27d 5.2 bh142 5.2 eh71470 c2c 540 47.0 750 dh71470 f27d 5.2 bh142 5.2 eh71560 c2c 590 56.0 650 dh71560 f27d 5.2 bh142 5.2 eh71680 c2c 650 68.0 500 dh71680 f27d 5.2 bh142 5.2 eh71820 c2d 720 82.0 400 dh71820 f27d 5.2 bh142 5.2 eh71999 c2d 800 100.0 300 dh71999 f27d 5.2 bh142 5.2 v br 30 v this series of high q epi-junction microwave tuning varactors (30 v) incorporates a passivated mesa technology. it is well suited for frequency tuning applications up to ku band. description (1) custom cases available on request temperature ranges: (2) closer capacitance tolerances available on request operating junction (t j ) : -55 c to +150 c (3) c t = c j + c b storage : -65 c to +175 c type case m pf type case case c ase c ase c apacitance c apacitance c b c b v r = 4 v v r = 4 v f= 1 mh z f = 50 mh z test conditions gold junction fig. of tuning tuning dia capacitance merit ratio ratio c j qc to /c t 30 c to /c t 30 characteristics at 25? v br (10 ?) 30 v standard cases other cases c hip d iodes c hip and p ackaged d iodes p ackaged d iodes (1) high q silicon abrupt junction tuning varactor
1-35 sales offices: visit our web site at http://www.temex.net tuning varactor high q silicon abrupt junction tuning varactor typ. 20 % (2) min. c b = 0.18 pf (3) min. c b = 0.12 pf (3) min. eh72004 c2a 60 0.4 3000 dh72004 f27d 3.5 m208 3.7 eh72006 c2a 80 0.6 2900 dh72006 f27d 3.9 m208 4.1 eh72008 c2a 90 0.8 2800 dh72008 f27d 4.2 m208 4.5 eh72010 c2a 110 1.0 2700 dh72010 f27d 4.5 m208 4.7 eh72012 c2a 110 1.2 2700 dh72012 f27d 4.7 m208 4.9 eh72016 c2a 120 1.6 2600 dh72016 f27d 5.0 m208 5.2 eh72020 c2a 140 2.0 2500 dh72020 f27d 5.2 m208 5.5 eh72025 c2a 150 2.5 2400 dh72025 f27d 5.4 m208 5.6 eh72030 c2a 170 3.0 2300 dh72030 f27d 5.5 m208 5.7 eh72037 c2a 190 3.7 2200 dh72037 f27d 5.6 m208 5.7 eh72045 c2a 210 4.5 2000 dh72045 f27d 5.7 m208 5.8 eh72054 c2a 230 5.4 1900 dh72054 f27d 5.8 m208 5.9 10 % (2) c b = 0.18 pf (3) c b = 0.2 pf (3) eh72067 c2b 250 6.7 1800 dh72067 f27d 5.9 bh142 6.0 eh72080 c2b 280 8.0 1700 dh72080 f27d 5.9 bh142 6.0 eh72100 c2b 310 10.0 1600 dh72100 f27d 6.0 bh142 6.0 eh72120 c2b 340 12.0 1500 dh72120 f27d 6.0 bh142 6.0 eh72150 c2b 380 15.0 1400 dh72150 f27d 6.0 bh142 6.0 eh72180 c2b 420 18.0 1300 dh72180 f27d 6.0 bh142 6.0 eh72200 c2b 440 20.0 1200 dh72200 f27d 6.0 bh142 6.0 eh72220 c2c 470 22.0 1100 dh72220 f27d 6.0 bh142 6.0 eh72270 c2c 520 27.0 1000 dh72270 f27d 6.0 bh142 6.0 eh72330 c2c 570 33.0 900 dh72330 f27d 6.0 bh142 6.0 eh72390 c2c 620 39.0 800 dh72390 f27d 6.0 bh142 6.0 10 % (2) c b = 0.18 pf (3) eh72470 c2d 680 47.0 700 dh72470 bh28 6.0 eh72560 c2d 740 56.0 600 dh72560 bh28 6.0 eh72680 c2d 820 68.0 450 dh72680 bh28 6.0 10 % (2) c b = 0.4 pf (3) eh72820 c2g 900 82.0 350 dh72820 bh141 6.0 eh72999 c2g 1000 100.0 250 dh72999 bh141 6.0 this series of high q epi-junction microwave tuning varactors (45 v) incorporates a passivated mesa technology. it is well suited for frequency tuning applications up to x band. description (1) custom cases available on request temperature ranges: (2) closer capacitance tolerances available on request operating junction (t j ) : -55 c to +150 c (3) c t = c j + c b storage : -65 c to +175 c type case m pf type case case case case capacitance capacitance c b c b test conditions g old junction fig. of tuning tuning d ia c apacitance m erit ratio ratio c j qc to /c t 45 c to /c t 45 characteristics at 25 c v br (10 ?) 45 v s tandard c ases o ther c ases chip diodes chip and packaged diodes packaged diodes (1) v br 45 v v r = 4 v v r = 4 v f= 1 mh z f = 50 mh z
1-36 sales offices: visit our web site at http://www.temex.net plastic package, surface mount hyperabrupt tuning varactor description this series of silicon tuning varactors consists of hyperabrupt epitaxial devices. they incorporate a passivated mesa technology. this family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. application the dh76000 and dh77000 series hyperabrupt tuning varactor are offered in a large selection of capacitance range. they provide the highest q factor (low reverse series resistance). typical applications include low noise narrow and moderate frequency bandwidth applications (vco mainly) from hf to microwave frequencies (up to 3 ghz). other applications are voltage tuned ?ters, phase shifters, delay lines... 20 volt hyperabrupt junction varactors characteristics @ ta=+25 c temperature ranges: reverse breakdown voltage, vb = 20 v min. @ 10 ? operating junction (tj) : -55 c to +125 c reverse current, ir = 200 na @ 16 v storage : -55 c to +150 c total capacitance (pf) tuning ct ratio test f = 1 mhz f = 1 mhz f=1 mhz f = 1 mhz ct1v/ct12v ct1v/ct20v conditions vr = 1 v vr = 4 v vr = 12 v vr = 20 v f = 1 mhz f = 1 mhz type typ 20 % typ. typ. typ. typ. dh76010 2.5 1.2 0.6 0.5 4.1 4.9 dh76015 3.6 1.7 0.8 0.7 4.4 5.4 dh76022 5.2 2.4 1.1 0.9 4.7 5.8 dh76033 8.0 3.5 1.6 1.3 4.9 6.1 dh76047 11.0 4.9 2.2 1.7 5.0 6.4 dh76068 16.0 7.0 3.1 2.4 5.1 6.5 dh76100 23.0 10.0 4.5 3.5 5.2 6.7 dh76150 35.0 15.0 6.6 5.1 5.2 6.8 12 volt hyperabrupt junction varactors characteristics @ ta=+25 c temperature ranges: reverse breakdown voltage, vb = 12 v min. @ 10 ? operating junction (tj) : -55 c to +125 c reverse current, ir = 200 na @ 8 v storage : -55 c to +150 c total capacitance (pf) tuning ct ratio test f = 1 mhz f = 1 mhz f=1 mhz ct1v/ct2.5v ct1v/ct4v conditions vr = 1 v vr = 2.5 v vr = 4 v f = 1 mhz f = 1 mhz type typ 20 % typ. typ. typ. dh77033 6.0 3.5 1.9 1.7 3.1 dh77047 8.5 4.9 2.7 1.7 3.2 dh77068 12.0 7.0 3.8 1.7 3.2 dh77100 18.0 10.0 5.5 1.7 3.2 dh77150 27.0 15.0 8.1 1.8 3.3 tuning varactor plastic package, surface mount hyperabrupt tuning varactor
1-37 sales offices: visit our web site at http://www.temex.net tuning varactor plastic package, surface mount hyperabrupt tuning varactor typical junction capacitance versus reverse voltage vr (v) 0.10 1.00 0.1 0.01 100 100.00 c j (pf) profils in cj 76010 76015 76022 76033 76047 76068 76100 76150 10 10.00 0.1 1 10 v (v) cj (pf) 1 100 dh77150 dh77033 dh77047 dh77068 dh77100 10
tuning varactor plastic package, surface mount hyperabrupt tuning varactor 1-38 sales offices: visit our web site at http://www.temex.net packages sod323 sot23 sot23 sot23 sot143 packages dh76010 dh76010-60 dh76010-51 dh76010-53 dh76010-54 dh76010-70 dh76015 dh76015-60 dh76015-51 dh76015-53 dh76015-54 dh76015-70 dh76022 dh76022-60 dh76022-51 dh76022-53 dh76022-54 dh76022-70 dh76033 dh76033-60 dh76033-51 dh76033-53 dh76033-54 dh76033-70 dh76047 dh76047-60 dh76047-51 dh76047-53 dh76047-54 dh76047-70 dh76068 dh76068-60 dh76068-51 dh76068-53 dh76068-54 dh76068-70 dh76100 dh76100-60 dh76100-51 dh76100-53 dh76100-54 dh76100-70 dh76150 dh76150-60 dh76150-51 dh76150-53 dh76150-54 dh76150-70 dh77033 dh77033-60 dh77033-51 dh77033-53 dh77033-54 dh77033-70 dh77047 dh77047-60 dh77047-51 dh77047-53 dh77047-54 dh77047-70 dh77068 dh77068-60 dh77068-51 dh77068-53 dh77068-54 dh77068-70 dh77100 dh77100-60 dh77100-51 dh77100-53 dh77100-54 dh77100-70 dh77150 dh77150-60 dh77150-51 dh77150-53 dh77150-54 dh77150-70 (1) other con?uration available on request. how to order? dh76150 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143
tuning varactor high q silicon hyperabrupt junction tuning varactor 1-39 sales offices: visit our web site at http://www.temex.net high q silicon hyperabrupt junction tuning varactor description this series of silicon tuning varactors consists of hyperabrupt epitaxial devices. they incorporate a passivated mesa technology. packaged or chip devices are available for linear electronic tuning from vhf up to ku band. characteristics @ ta = +25 c reverse breakdown voltage, vb = @ 10 ?: 20 v min. reverse current, ir @ 16 v: 200 na figure of total capacitance (pf) tuning merit (q) ct ratio test f = 50 mhz f = 1 mhz f = 1 mhz f = 1 mhz f = 1 mhz ct1v/ct12v ct1v/ct20v conditions vr = 4 v vr = 1 v vr = 4 v vr = 12 v vr = 20 v f = 1 mhz f = 1 mhz type case (1) typ. typ. 20% typ. typ. typ. typ. chip dh76010 f27d 2200 2.5 1.2 0.6 0.5 4.1 4.9 eh76010 dh76015 f27d 2000 3.6 1.7 0.8 0.7 4.4 5.4 eh76015 dh76022 f27d 1700 5.2 2.4 1.1 0.9 4.7 5.8 eh76022 dh76033 f27d 1400 7.7 3.5 1.6 1.3 4.9 6.1 eh76033 dh76047 f27d 1000 11 4.9 2.2 1.7 5.0 6.4 eh76047 dh76068 f27d 700 16 6.9 3.0 2.4 5.1 6.5 eh76068 dh76100 f27d 400 23 10.2 4.5 3.5 5.2 6.7 eh76100 dh76150 f27d 140 34 15.2 6.6 5.1 5.2 6.8 eh76150 (1) custom cases available on request temperature ranges: operating junction (t j ) : -55 c to +150 c storage : -65 c to +150 c typical junction capacitance reverse voltage vr (v) 0.10 1.00 0.1 0.01 100 100.00 c j (pf) profils in cj 76010 76015 76022 76033 76047 76068 76100 76150 10 10.00
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